| PART |
Description |
Maker |
| MT46V32M16P-5BJ |
Double Data Rate (DDR) SDRAM MT46V128M4 ?32 Meg x 4 x 4 banks MT46V64M8 ?16 Meg x 8 x 4 banks MT46V32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
| M13S128168A-7.5AB M13S128168A-5BG M13S128168A-5T M |
2M x 16 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M13S256328A |
2M x 32 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M13S256328A M13S256328A-5BG |
2M x 32 Bit x 4 Banks Double Data Rate SDRAM
|
http://
Elite Semiconductor Memory Technology Inc.
|
| M13S128324A-3.6BG M13S128324A-4BG M13S128324A-4LG |
1M x 32 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
| ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 |
Synchronous DRAM(4M X 8 Bit X 4 Banks)
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行
133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
|
ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
|
| NT5DS4M32EG |
1M X 32 Bits X 4 Banks Double Data Rate Synchronous RAM
|
NanoAmp Solutions
|
| K4D64163HF K4D64163HF-TC60 K4D64163HF-TC33 K4D6416 |
From old datasheet system
1M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MSM27V3255CZ |
1,048,576-Double Word x 32-Bit or 2,097,152-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| MT41J64M16JT MT41J128M8 MT41J256M4 MT41J64M16JT-12 |
DDR3 SDRAM MT41J256M4 ?32 Meg x 4 x 8 banks MT41J128M8 ?16 Meg x 8 x 8 banks MT41J64M16 ?8 Meg x 16 x 8 banks
|
Micron Technology
|
| HY57V651620BLTC-6 HY57V651620BTC-6 HY57V651620BLTC |
CABLE ASSEMBLY; SMA MALE TO SMA FEMALE BULKHEAD; 50 OHM, RG223/U COAX, DOUBLE SHIELDED;
4 Banks x 1M x 16Bit Synchronous DRAM
|
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
